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Tel Deep Trench Silicon Etcher-telius Sp 308 Qs

Tel Deep Trench Silicon Etcher-telius Sp 308 Qs

Posted by gnequipment
Posting ads for 7 years
TEL Deep Trench Silicon Etcher-TELIUS SP 308 QS(More information: [email protected] http://www.globalnanotechequipment.com)Manufacturer:TelModel:TEL Deep Trench Silicon Etcher-TELIUS SP 308QSCondition:Used,complete,crated,working before crating.Amount:3 setsTEL Deep Trench Silicon Etcher Model: TELIUS SP 308 QS ETCH TOOL, (4) CHAMBERS, 5 loader ports, 300mm FOUP, Load Locker Modules,4 Deep Trench Silicon Etcher (SCCM) Super Capacitively Coupled Module Chambers,40MHz and 3.2MHz dual Frequency Source (GEW3040 and NOVA50A),ESD chuck, Temperature Control.Specifications1. Chamber: Aluminum Alloy Chamber, Aluminum Alloy (A6061), Hard Sulfuric Acid Anodizing Surface finishing.2. RF application method: Apply upper RF to lower electrode, SCCM Type Discharge method.3. Temperature control: Apply upper RF to lower electrode;4. Upper electrode: Upper electrode is by Heater and Cooling Water. Lower electrode is by circulating coolant. Side wall is by heater.5. Upper electrode: Quartz Cover or Aluminum Alloy(A6061) with Hard Sulfuric Acid Anodizing.6. Shield ring:7. Lower electrode: Ceramics electro static chuck with Thermometer. Wafer holding method is Electrostatic chuck(?300) mechanism.8. Focus ring :Quartz.9. Exhaust Plate: Aluminum Alloy with Hard Sulfuric Acid Anodizing.10. Insulation ring: Quartz Cover or Aluminum Alloy(A6061) with Hard Sulfuric Acid Anodizing.11. Distance between electrodes: 30?35 mm.12. Magnet: Intensity:170G(center), Rotation:20+-1rpm.13. Pressure monitor: Each chamber has following three kind of pressure monitor.14. He B.P UNIT: Cooling Gas for Wafer back, PCV(STEC) Pressure Switch, Two lines line/control (Center/Edge),0~7980Pa(0~60Torr) range of pressure, He Leakage monitor, VALVE ON/OFF sensor for Detection of valve open/close.15. End point detection : SE2000.16. Confirmation of luminescence.17. WINDOW: Orifice(Quartz).18. Deposition shield: Use removable depo-shield(The material is quartz) for easy cleaning of process chamber.19. Shutter: Aluminium Alloy with Hard Sulfuric Anodizing Plate, Air Cylinder Drive.20. Final Valve: Diaphragm Type MEGA-One (Fujikin)?21. APC 22. Manifold: Aluminium Alloy with Hard Sulfuric Anodizing23. O-ring for Chamber:: Chemratz 24. Specifications for performance: (1)Ultimate Vacuum: 0.0133 Pa(7.5*10-2 mTorr) or less; ?2?Leak Back:0.133 Pa/min(1 mTorr/min) or less.
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