Accuthermo Aw 810 Rta Rtp For 5 To 8 Inch Wafer
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AccuThermo AW 810M is a desktop rapid thermal processor for 5
to 8 inch wafer , which uses high-intensity, visible radiation to heat single wafer for short periods at precisely controlled temperatures. These capabilities, combined with the
heating chamber's cold-wall design, superior heating uniformity advanced temperature control technology and AW 900 new software, provide significant advantages over conventional furnace processing
and conventional RTP systems.
Allwin21 is the exclusive licenced manufacturer for AG Heatpulse 610. Allwin21 is manufacturing the AccuThermo AW-410,AccuThermo AW-610,AccuThermo AW 810,originally the AG Heatpulse 610.The AccuThermo AW-410,AccuThermo AW-610,AccuThermo AW 810 have innovative software and more advanced temperature control technologies.
AG Associates Heatpulse is one of the most famous RTP equipment manufacturers. Many Integrated Chip companies, R&D centers, Institutes all over the world have been using AG Heatpulse Systems.
Allwin21 Corp can provide the following refurbished RTP equipment
- AG Heatpulse 210
- AG Heatpulse 410
- AG Heatpulse 610
- AG Heatpulse 2100
Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so they do not break due to thermal shock..Such rapid heating rates are attained by high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).
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